semiconductor group jan-15-1998 page 1 hitfet bsp 78 preliminary data smart lowside power switch features logic level input input protection (esd) thermal shutdown with auto restart overload protection short circuit protection overvoltage protection current limitation analog driving possible product summary drain source voltage v 40 v ds on-state resistance r ds(on) 50 m w nominal load current i d(nom) 3 a clamping energy mj e as 500 application all kinds of resistive, inductive and capacitive loads in switching or linear applications c compatible power switch for 12 v and 24 v dc applications replaces electromechanical relays and discrete circuits general description n channel vertical power fet in smart sipmos technology. fully protected by embedded protection functions. pin symbol function 1 in input 2 drain output to the load 3 source ground tab drain output to the load
semiconductor group jan-15-1998 page 2 preliminary data bsp 78 block diagram protection overvoltage drain in esd hitfet a source current over- protection temperature short circuit protection + limitation v bb short circuit protection load overload protection m unit gate-driving
semiconductor group jan-15-1998 page 3 preliminary data bsp 78 maximum ratings at t j = 25c, unless otherwise specified parameter value unit symbol v 40 v ds drain source voltage drain source voltage for short circuit protection 40 v ds(sc) continuous input voltage v in -0.2 ... +10 peak input voltage ( i in 2 ma) v in(peak) -0.2 ... v ds operating temperature t j c -40 ...+150 storage temperature t stg -55 ...+150 power dissipation , t c = 85 c p tot w 1.7 unclamped single pulse inductive energy f) e as 500 mj e lectro s tatic d ischarge voltage (human body model) according to mil std 883d, method 3015.7 and eos/esd assn. standard s5.1 - 1993 2000 v esd kv e din humidity category, din 40 040 iec climatic category; din iec 68-1 40/150/56 thermal resistance k/w r thja junction - ambient: @ min. footprint @ 6 cm 2 cooling area f) 125 72 junction-soldering point: r thjs 17 k/w 1 not tested, specified by design 2 device on 50mm+50mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
semiconductor group jan-15-1998 page 4 preliminary data bsp 78 electrical characteristics parameter symbol unit values at t j = 25c, unless otherwise specified min. max. typ. characteristics drain source clamp voltage t j = - 40 ...+ 150 , i mess = 10 ma - v ds(az) 40 55 v i dss - - off-state drain current t j = -40 ... +150c v in = 0 v, v ds = 32 v 10 a input treshold voltage i d = 0.7 ma 1.7 1.3 v 2.2 v in(th) i in(on) on state input current 30 a 10 - r ds(on) on-state resistance i d = 3 a, v in = 5 v, t j = 25 c i d = 3 a, v in = 5 v, t j = 150 c m w 60 120 - - 45 75 r ds(on) on-state resistance i d = 3 a, v in = 10 v, t j = 25 c i d = 3 a, v in = 10 v, t j = 150 c 50 100 35 65 - - i d(nom) nominal load current v ds = 0.5 v, t s = 85 c, t j < 150c, v in = 10 v - - a 3 a i d(lim) current limit (active if v ds >2.5 v) v in = 10 v, v ds = 12 v 16 24 32 dynamic characteristics turn-on time v in to 90% i d : r l = 5 w , v in = 0 to 10 v, v bb = 12 v t on - 60 150 s turn-off time v in to 10% i d : r l = 5 w , v in = 10 to 0 v, v bb = 12 v t off - 60 150 slew rate on 70 to 50% v bb : r l = 5 w , v in = 0 to 10 v, v bb = 12 v -dv ds /dt on - 0.4 1 v/s slew rate off 50 to 70% v bb : r l = 5 w , v in = 10 to 0 v, v bb = 12 v dv ds /dt off - 0.7 1
semiconductor group jan-15-1998 page 5 preliminary data bsp 78 electrical characteristics parameter symbol unit values at t j = 25c, unless otherwise specified typ. min. max. protection functions c 150 t jt thermal overload trip temperature 165 - thermal hysteresis d t jt - 10 k - 300 input current protection mode - - i in(prot) a unclamped single pulse inductive energy f) i d = 3 a, t j = 25 c, v bb = 12 v i d = 3 a, t j = 150 c, v bb = 12 v e as 500 300 - - - - mj inverse diode continuous source drain voltage v in = 0 v , - i d = 5* 3 a, t p = 300 s - 1.1 - v v sd 1 not tested, specified by design
semiconductor group jan-15-1998 page 6 preliminary data bsp 78 block diagram inductive and overvoltage output clamp terms short circuit behaviour input circuit (esd protection) in t v t i in t i d t t j thermal hysteresis gate drive source/ ground input input is not designed for dc current > 2 ma
semiconductor group jan-15-1998 page 7 preliminary data bsp 78 maximum allowable power dissipation p tot = f(t c ) -50 -25 0 25 50 75 100 c 150 t c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 w 1.7 p tot on-state resistance r on = f(t j ); i d = 3 a; v in =10v -40 -15 10 35 60 85 110 135 c 185 t j 0 10 20 30 40 50 60 70 80 90 100 m w 120 r ds(on) typ. max. on-state resistance r on = f(t j ); i d = 3 a; v in =5v -40 -15 10 35 60 85 110 135 c 185 t j 0 10 20 30 40 50 60 70 80 90 100 110 120 m w 140 r ds(on) typ. max. typ. input threshold voltage v in(th) = f(t j ); i d = - ; v ds =12v -50 -25 0 25 50 75 100 c 150 t j 0.0 0.2 0.5 0.8 1.0 1.2 1.5 v 2.0 v in(th)
semiconductor group jan-15-1998 page 8 preliminary data bsp 78 typ. short circuit current i d(sc) = f(t j ); v ds =12v parameter: v in -40 -15 10 35 60 85 110 135 c 185 t j 0 5 10 15 20 a 30 i d 5v vin=10v typ. transfer characteristics i d = f(v in ); v ds =12v; t j =25c 0 1 2 3 4 5 6 7 8 v 10 v in 0 5 10 15 20 a 30 i d typ. output characteristic i d = f(v ds ); t j =25c parameter: v in 0 1 2 3 4 v 6 v ds 0 5 10 15 20 25 a 35 i d vin=3v 4v 5v 6v 7v 10v typ. overload current i d(lim) = f( t ) , v bb =12 v, no heatsink parameter: t jstart 0.0 0.5 1.0 1.5 2.0 s 3.0 t 0 5 10 15 20 25 30 a 40 i d(lim) -40c 25c 85c 150c
semiconductor group jan-15-1998 page 9 preliminary data bsp 78 transient thermal impendance z thjc = f(t p ) parameter: d=t p /t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w z thja 0 0.01 0.02 0.05 0.1 0.2 d=0.5 typ. off-state drain current i dss = f( t j ) -40 -15 10 35 60 85 110 135 c 185 t j 0 1 2 3 4 5 6 7 8 a 10 i dss typ. typ. max.
semiconductor group jan-15-1998 page 10 preliminary data bsp 78 package and ordering code all dimensions in mm ordering code: q67060-s7203-a2
|
